Next week, Prof. Pallab Bhattacharya, well known from his publications on optoelectronics, will visit our School. He will give a conference at 12:00 at room C-206-1. Full details about the talk are:
Title: "III-Nitride Nanowire Light Sources"
Speaker: Prof. Pallab Bhattacharya
Institution: Department of Electrical Engineering and Computer Science. University of Michigan, Ann Arbor, MI, USA
Abstract:
In(Ga)N nanowires can be grown catalyst-free on silicon substrates by molecular beam epitaxy with density in the range of108-1011cm-2 . The nanowires grow vertically in the wurtzite crystalline form and the In composition of the nanowire can be varied to produce emission in the range of 366-700nm. Most importantly, extensive structural characterization indicates that the nanowires are relatively free of extended defects. It has also been reported that the measured surface recombination velocity in GaN nanowires is very small and ∼10 3cm/s. Temperature dependent luminescence of the nanowires does not exhibit effects related to compositional inhomogeneities. Due to radial relaxation of strain during epitaxy, the polarization fields in nanowire heterostructures is significantly smaller than those in bulk heterostructures. This reduces the blue shift of the emission peak with injection due to the quantum confined Stark effect. Single or an array of such nanowires can therefore provide an excellent platform for the realization of advanced light sources with unique characteristics. In this talk I will describe the characteristics of visible light emitting diodes and electrically pumped lasers and single photon sources made with In(Ga)N/GaN disk-in-nanowire heterostructures.
Date: Monday, 16 of June of 2014
Time: 12:00 hora
Place: Sala 206-1 Edificio López Araújo. ETSI de Telecomunicación.
